GP250MHB06S Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP250MHB06S
1400
td(off)
1200
1000
Tj = 125˚C
V_GE = ±15V
V_CE = 300V
R_g = 5Ω
800
t_f
600
td(on)
400
200
tr
0
0
50 100 150 200 250 300
Collector current, I_C - (A)
Fig.11 Typical switching characteristics
250
225
200
175
150
125
100
75
50
25
0
0
T_j = 125˚C
T_j = 25˚C
0.25
0.50
0.75
1.00
1.25
Foward voltage, V_F - (V)
Fig.12 Diode typical forward characteristics
10000
600
500
400
300
200
100 T_j = 125˚C
V_ge = ±15V
R_g = 5Ω
0
0
200
400
600
Collector-emitter voltage, V_ce - (V)
Fig.13 Reverse bias safe operating area
I_C max. (single pulse)
1000
50µs
100µs
100
I_C
max.
DC
t_p = 1ms
(continuous)
10
1
800
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
Fig.14 Forward bias safe operating area (DC and single pulse)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
www.dynexsemi.com