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| GP250MHB06S Datasheet, PDF (2/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module | |||
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GP250MHB06S
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
VCES
V
GES
IC
Collector-emitter voltage
Gate-emitter voltage
Collector current
IC(PK)
Pmax
Maximum power dissipation
Visol
Isolation voltage
VGE = 0V
-
DC, Tcase = 25ËC
DC, T = 75ËC
case
1ms, Tcase = 25ËC
1ms, T = 75ËC
case
(Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
600
V
±20
V
350
A
250
A
700
A
500
A
1250
W
2500
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Conditions
Rth(j-c)
R
th(j-c)
Rth(c-h)
Tj
Thermal resistance - transistor
DC junction to case per arm
Thermal resistance - diode
DC junction to case
-
Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease)
Junction temperature
Transistor
Diode
Tstg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M6
Min. Max. Units
-
100 oC/kW
-
250 oC/kW
-
15 oC/kW
-
150
oC
-
125
oC
- 40 125
oC
-
5
Nm
-
5
Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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