GP250MHB06S Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP250MHB06S
ELECTRICAL CHARACTERISTICS
T_j = 25˚C unless stated otherwise.
Symbol
Parameter
I
CES
Collector cut-off current
I_GES
V_GE(TH)
Gate leakage current
Gate threshold voltage
V
Collector-emitter saturation voltage
CE(SAT)
I_F
Diode forward current
I
Diode maximum forward current
FM
V_F
Diode forward voltage
C_ies
Input capacitance
Conditions
V_GE = 0V, V_CE = V_CES
V_GE = 0V, V_CE = V_CES, T_j = 125˚C
V_GE = ±20V, V_CE = 0V
I_C = 10mA, V_GE = V_CE
V = 15V, I = 250A
GE
C
V_GE = 15V, I_C = 250A, T_j = 125˚C
DC
t = 1ms
p
I_F = 250A,
I_F = 250A, T_j = 125˚C
V_CE = 25V, V_GE = 0V, f = 1MHz
Min. Typ. Max. Units
-
-
15 mA
-
-
50 mA
-
-
1
µA
4
-
7.5
V
-
2.2 2.7
V
-
2.3 2.8
V
-
-
250 A
-
-
500
A
-
1.1 1.9
V
-
1.05 1.8
V
- 27000 -
pF
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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