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| DG758BX45_15 Datasheet, PDF (8/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG758BX45
3000
2500
2000
Conditions:
Tj = 125°C, IFGM = 40A
Cs = 6µF, Rs = 4.4â¦
dIT/dt = 300A/µs
dIFG/dt = 40A/µs
1500
VD = 2250V
VD = 1500V
1000
500
VD = 750V
3500
3250
3000
2750
2500
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.10 Turn-on energy vs on-state current
VD = 2250V
3000
Conditions:
IT = 3000A
Tj = 125°C
Cs = 6µF
2500 Rs = 4.4 Ohms
IFGM = 40A
2000
VD = 2250V
VD = 1500V
2250
2000
1750
1500
VD = 1500V
1500
1000
VD = 750V
1250
VD = 750V
1000 Conditions:
IT = 3000A, Tj = 125°C
750
Cs = 6µF, Rs = 4.4â¦,
dIT/dt = 300A/µs,
dIFG/dt = 40A/µs
500
0 10 20 30 40 50 60 70 80
Peak forward gate current IFGM- (A)
Fig.11 Turn-on energy vs peak forward gate current
500
0
0 50 100 150 200 250 300
Rate of rise of on-state current dIT/dt - (A/µs)
Fig.12 Turn-on energy vs rate of rise of on-state current
8/19
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