DG758BX45_15 Datasheet, PDF (11/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
7.0
Conditions:
6.0
T_j = 125°C
Cs = 6µF
dI_GQ/dt = 40A/µs
5.0
V_DM = 3000V
V_DM = 2000V
4.0
V_DM = 1000V
3.0
2.0
1.0
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.17 Turn-off energy vs on-state current
7.0
Conditions:
I_T = 3000A
T_j = 125°C
Cs = 6µF
6.0
V_DM = 3000V
V_DM = 2000V
5.0
4.0
V_DM = 1000V
3.0
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt- (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19