DG758BX45_15 Datasheet, PDF (14/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
2.5
T_j = 125°C
2.0 ^{Tj = 25°C}
1.5
1.00
Conditions:
I_T = 3000A
Cs = 6µF
0.5
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.23 Gate fall time vs rate of rise of reverse gate current
900
Conditions:
800
Cs = 6µF
dI_GQ/dt = 40A/µs
700
600
T_j = 125°C
T_j = 25°C
500
400
300
200
100
0
500
1000
1500
2000
2500
On-state current - (A)
Fig.24 Peak reverse gate current vs turn-off current
3000
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