DG758BX45_15 Datasheet, PDF (10/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
10/19
4.0
Conditions:
3.5
T_j = 25°C
Cs = 6µF
dI_GQ/dt = 40A/µs
3.0
V_DM = 3000V
V_DM = 2000V
2.5
V_DM = 1000V
2.0
1.5
1.0
0.5
0
0
500
1000
1500
2000
2500
3000
On-state current - (A)
Fig.15 Turn-off energy vs on-state current
4.0 _Conditions:
3.8
I_T = 3000A
T_j = 25°C
Cs = 6µF
3.6
V_DM = 3000V
3.4
V_DM = 2000V
3.2
3.0
2.8
2.6
V_DM = 1000V
2.4
2.2
2.0
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current