DG758BX45_15 Datasheet, PDF (13/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

30
T_j = 125°C
25
T_j = 25°C
20
Conditions:
I_T = 3000A
Cs = 6µF
DG758BX45
15
10
5
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.5
Conditions:
Cs = 6µF
dI_GQ/dt = 40A/µs
2.0
T_j = 125°C
T_j = 25°C
1.5
1.0
0.5
0
500
1000
1500
2000
2500
On-state current - (A)
Fig.22 Gate fall time vs on-state current
3000
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