DG758BX45_15 Datasheet, PDF (4/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
CURVES
2.0
8.0
1.5
6.0
1.0
4.0
V_GT
0.5
I_{GT 2.0}
0
0
-50 -25 0 25 50 75 100 125
Junction temperature T_j - (°C)
Fig.1 Maximum gate trigger voltage/current vs junction temperature
5000
Measured under pulse
conditions I_G(ON) = 8A
4000
3000
T_j = 25°C
2000
T_j = 125°C
1000
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Instantaneous on-state voltage - (V)
FIG 2 MAXIMU_FiM_g.2LI_OM_nI_-T_stO_atN_{e c}S_hT_aA_raT_cE_terC_isH_tiA_csRACTERISTICS
4/19