DG758BX45_15 Datasheet, PDF (5/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG758BX45
0.020
3000
2500
2000
1500
1000
500
0
0
Conditions:
T_j = 125°C,
V_DM = 2000V
dI_GQ/dt = 40A/µs
1.0 2.0 3.0 4.0 5.0 6.0
Snubber capacitance Cs - (µF)
Fig.3 Maximum dependence of I_TCM on C_S
0.015
dc
0.010
0.005
0
0.001
0.01
0.1
1.0
10
Time - s
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
40
30
20
10
0
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (ms)
Fig.5 Surge (non-repetitive) on-state current vs time
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