DG648BH45 Datasheet, PDF (6/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG648BH45
4000
Conditions:
I_G(ON) = 7A
3000
dc
2000
180˚
120˚
60˚
30˚
1000
0
0
500
1000
1500 70 80 90 100 120 130
Mean on-state current I_T(AV) - (A)
Maximum permissible case
temperature - (˚C)
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
3000
2000
Conditions:
I_G(ON) = 7A
180˚
120˚
90˚
60˚
30˚
1000
0
0 200 400 600 800 1000 1200 1400 80 90 100 120 130
Mean on-state current I_T(AV) - (A)
Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
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