DG648BH45 Datasheet, PDF (15/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

750
Conditions:
C_S = 2.0µF,
I_T = 2000A
700
DG648BH45
T_j = 125˚C
650
T_j = 25˚C
600
550
500
20
30
40
50
60
70
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
8000
Conditions:
C_S = 2.0µF,
dI_GQ/dt = 40A/µs
6000
T_j = 125˚C
4000
T_j = 25˚C
2000
0
0
500
1000
1500
2000
2500
3000
On-state current I_T - (A)
Fig.26 Turn-off gate charge vs on-state current
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