DG648BH45 Datasheet, PDF (5/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

3000
Conditions:
T_j = 125˚C, V_DM = V_DRM,
dI_GQ/dt = 40A/µs
2000
DG648BH45
1000
0
0
1.0
2.0
3.0
4.0
Snubber capacitance C_S - (µF)
Fig.3 Maximum dependence of I_TCM on C_S
0.020
dc
0.015
0.010
0.005
0
0.001
0.01
0.1
1.0
10
Time - (s)
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
40
30
20
10
0
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Fig.5 Surge (non-repetitive) on-state current vs time
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