DG648BH45 Datasheet, PDF (2/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG648BH45
SURGE RATINGS
Symbol
Parameter
I_TSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
di /dt Critical rate of rise of on-state current
T
dV /dt Rate of rise of off-state voltage
D
L_S
Peak stray inductance in snubber circuit
Conditions
10ms half sine. T = 125oC
j
10ms half sine. T_j =125^oC
V = 4500V, I = 2000A, T = 125^oC, I > 30A,
D
T
j
FG
Rise time > 1.0µs
To 66% V_DRM; R_GK ≤ 1.5Ω, T_j = 125^oC
To 66% V ; V = -2V, T = 125^oC
DRM RG
j
dI^Ti_G⁼_Q/2d0t0=04A0, AV/^Dµ^Ms=, C4s50=02V.-,0-µ^{TFj = 125˚C,}
Max. Units
16.0
kA
1.28 x 10⁶ A²s
300
A/µs
175
1000
V/µs
V/µs
200
nH
GATE RATINGS
Symbol
Parameter
V
RGM
I_FGM
P_FG(AV)
P_RGM
di /dt
GQ
t_ON(min)
t_OFF(min)
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
Conditions
This value maybe exceeded during turn-off
Min. Max. Units
-
16
V
20 100
A
-
15
W
-
19 kW
30
60 A/µs
50
-
µs
100
-
µs
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Min. Max. Units
Double side cooled
- 0.018 ^oC/W
R_th(j-hs)
R_th(c-hs)
T_vj
T_OP/T_stg
-
DC thermal resistance - junction to heatsink Anode side cooled
surface
Cathode side cooled
Contact thermal resistance
Clamping force 20.0kN
With mounting compound
Virtual junction temperature
Operating junction/storage temperature range
Clamping force
-
0.03 ^oC/W
- 0.045 ^oC/W
per contact
- 0.006 ^oC/W
-
125
o_C
-40 125
o_C
18.0 22.0 kN
2/19