DG648BH45 Datasheet, PDF (16/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG648BH45
7000
6000
5000
4000
Conditions:
C_S = 2.0µF,
I_T = 2000A
T_J = 125˚C
T_j = 25˚C
3000
20
30
40
50
60
70
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
T_j = 125˚C
500
V_D = 2250V
V_D = 3000V
0
0.1
1.0
10
100
1000
Gate cathode resistance R_GK - (Ohms)
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
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