DG648BH45 Datasheet, PDF (18/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG648BH45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15˚
52
Anode
Ø100
Ø62.85
9.6
Ø62.85
55
Cathode
Nominal weight: 820g
Clamping force: 20kN ±10%
Lead length: 505mm
Package outine type code: H
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
GTO gate drive units
Recommendations for clamping power semiconductors
Use of V , r on-state characteristic
TO T
Impoved gate drive for GTO series connections
Application Note
Number
AN4506
AN4571
AN4839
AN5001
AN5177
18/19