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| DG648BH45 Datasheet, PDF (11/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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10000
8000
Conditions:
Tj = 125ËC,
CS = 2.0µF,
dIGQ/dt = 40A/µs
6000
4000
VDRM
0.75x VDRM
0.5x VDRM
DG648BH45
2000
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
FIG 17FTigU.R17NTOurFnF-oEffNeEneRrGgyYvs oOn-NstaSteTAcuTrEreCntURRENT
12000
10000
Conditions:
Tj = 125ËC,
CS = 2.0µF,
IT = 2000A
VDRM
3000
8000
0.75x VDRM
6000
0.5x VDRM
4000
20
30
40
50
60
70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
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