DS1251Y Datasheet, PDF (7/12 Pages) Dallas Semiconductor – 4096K NV SRAM with Phantom Clock

DS1251Y
PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
TYP
Read Cycle Time
CE Access Time
OE Access Time
CE to Output Low Z
OE to Output Low Z
CE to Output High Z
OE to Output High Z
Read Recovery
Write Cycle Time
Write Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
CE Pulse Width
RESET Pulse Width
CE High to Power–Fail
t_RC
120
t_CO
t_OE
t_COE
10
t_OEE
10
t_OD
t_ODO
t_RR
20
t_WC
120
t_WP
100
t_WR
20
t_DS
40
t_DH
10
t_CW
100
t_RST
200
t_PF
(0°C to 70°C; V_CC = 4.5 to 5.5V)
MAX
UNITS NOTES
ns
100
ns
100
ns
ns
ns
40
ns
5
40
ns
5
ns
ns
ns
ns
10
ns
11
ns
11
ns
ns
0
ns
POWER-DOWN/POWER-UP TIMING
PARAMETER
SYMBOL MIN
TYP
MAX
UNITS NOTES
CE at V_IH before Power–Down
t_PD
0
V_CC Slew from 4.5V to 0 volts
(CE at V_IH)
t_F
300
V_CC Slew from 0V to 4.5 volts
t_R
0
(CE at V_IH)
CE at V_IH after Power–Up
t_REC
µs
µs
µs
2
ms
PARAMETER
(t_A = 25°C)
SYMBOL MIN
TYP
MAX
UNITS NOTES
Expected Data Retention Time
t_DR
10
years
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery backup mode.
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