DS1251Y Datasheet, PDF (6/12 Pages) Dallas Semiconductor – 4096K NV SRAM with Phantom Clock

DS1251Y
MEMORY AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
DS1251Y-120
MIN MAX
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address
Change
t_RC
t_ACC
t_OE
t_CO
t_COE
t_OD
t_oH
120
120
60
120
5
40
5
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time from WE
t_WC
t_WP
t_AW
t_WR
t_ODW
t_OEW
t_DS
t_DH
120
90
0
20
40
5
50
20
(0°C to 70°C; V_CC = 5.0V ± 10%)
DS1251Y-150
MIN MAX
UNITS
NOTES
150
ns
150
ns
70
ns
150
ns
5
ns
5
70
ns
5
5
ns
150
ns
100
ns
3
0
ns
20
ns
70
ns
5
5
ns
5
60
ns
4
20
ns
4
AC TEST CONDITIONS
Output Load:
50 pF + 1TTL Gate
Input Pulse Levels:
0–3 volts
Timing Measurement Reference Levels
Input:
1.5 volts
Output:
1.5 volts
Input Pulse Rise and Fall Times:
5 ns
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