MTD120C10H8_16 Datasheet, PDF (9/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C986H8
Issued Date : 2016.10.14
Revised Date : 2016.11.07
Page No. : 9/14
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
Brekdown Voltage vs Ambient Temperature
20
1.4
16
4V
10V,9V,8V,7V,6V, 5V,
12
8
-VGS=3V
4
0
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
-VGS=4.5V
100
-VGS=10V
1.2
1
0.8
-ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
420
380
-ID=2A
340
300
260
220
180
140
100
60
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
-VGS=10V, -ID=2A
RDSON@Tj=25°C : 114 mΩ typ.
1.6
1.4
1.2
1
0.8
VGS=-4.5V, ID=-1.5A
0.6
RDSON@Tj=25°C : 133mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD120C10H8
CYStek Product Specification