MTD120C10H8_16 Datasheet, PDF (3/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
CYStech Electronics Corp.
Spec. No. : C986H8
Issued Date : 2016.10.14
Revised Date : 2016.11.07
Page No. : 3/14
7
-
0.8
-
nC VDS=80V, ID=2A, VGS=10V
1.8
-
-
-
2.7
A
11
0.79
1.2
V
VGS=0V, IS=2A
17.7
-
ns
IF=2A, dIF/dt=100A/μs
14.7
-
nC
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
-100
-
-
V
VGS=0V, ID=-250μA
VGS(th)
-1.0
-
-2.5
VDS=VGS, ID=-250μA
IGSS
-
-
±10
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
-1
-25
μA
VDS=-80V, VGS=0V
VDS=-80V, VGS=0V, Tj=125°C
-
*RDS(ON)
-
114
145
mΩ ^{ID=-2A, VGS=-10V}
133
175
ID=-1.5A, VGS=-4.5V
*GFS
-
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
6.7
-
S
VDS=-10V, ID=-2A
774
-
76
-
pF VDS=-30V, VGS=0V, f=1MHz
39
-
6.8
-
17.4
56.8
-
-
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
32
-
17.9
-
1.9
-
nC VDS=-80V, ID=-2A, VGS=-10V
4.9
-
-
-
-3
A
-12
-0.78
-1.2
V
VGS=0V, IS=-2.5A
17.5
-
ns
IF=-2A, dIF/dt=100A/μs
15.2
-
nC
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTD120C10H8
CYStek Product Specification