MTD120C10H8_16 Datasheet, PDF (7/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C986H8
Issued Date : 2016.10.14
Revised Date : 2016.11.07
Page No. : 7/14
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
1.4
Threshold Voltage vs Junction Tempearture
Ciss
100
C _oss
10
0
100
Crss
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
1.2
1
ID=1mA
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=10V
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
10 Limited
1
100μs
1ms
10ms
100ms
0.1
1s
0.01 ^{TA=25°C, Tj=150°C}
DC
VGS=10V, RθJA=50°C/W
Single Pulse
0.001
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
8
6
4
VDS=80V
2
ID=2A
0
0
2
4
6
8
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
3.5
3
2.5
2
1.5
1
TA=25°C
VGS=10V
0.5
RθJA=50°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD120C10H8
CYStek Product Specification