MTD120C10H8_16 Datasheet, PDF (10/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C986H8
Issued Date : 2016.10.14
Revised Date : 2016.11.07
Page No. : 10/14
Typical Characteristics(Cont.) : Q2(P-channel)
Capacitance vs Drain-to-Source Voltage
10000
1.6
Threshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss
1.2
1
C _oss
0.8
-ID=1mA
10
0
Crss
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
0.6
-ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
-VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
Limited
10
100μs
1ms
1
10ms
100ms
0.1
1s
0.01 ^{TA=25°C, Tj=150°C}
DC
VGS=10V, RθJA=50°C/W
Single Pulse
0.001
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
8
6
4
VDS=-80V
2
ID=-2A
0
0
4
8
12 16 20 24
Qg, Total Gate Charge(nC)
3.5
3
2.5
2
1.5
1
0.5
0
25
Maximum Drain Current vs Case Temperature
TA=25°C
-VGS=10V
RθJA=50°C/W
50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD120C10H8
CYStek Product Specification