MTD120C10H8_16 Datasheet, PDF (8/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C986H8
Issued Date : 2016.10.14
Revised Date : 2016.11.07
Page No. : 8/14
Typical Characteristics(Cont.) : Q1( N-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
1000
TJ(MAX)=150°C
TA=25°C
100
RθJA=50°C/W
Typical Transfer Characteristics
20
VDS=10V
16
12
8
10
4
1
0
0.0001 0.001 0.01 0.1 1 10
Pulse Width(s)
100 1000
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTD120C10H8
CYStek Product Specification