MTD120C10H8_16 Datasheet, PDF (6/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C986H8
Issued Date : 2016.10.14
Revised Date : 2016.11.07
Page No. : 6/14
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
20
1.4
10V, 9V, 8V, 7V, 6V, 5V
16
4V
1.2
Brekdown Voltage vs Ambient Temperature
12
8
4
0
0
3.5V
3V
VGS=2.5V
4
8
12
16
20
VDS, Drain-Source Voltage(V)
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
VGS=4.5V
0.8
VGS=10V
0.6
Tj=150°C
0.4
100
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
280
260
ID=2A
240
220
200
180
160
140
120
100
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=10V, ID=2A
RDSON@Tj=25°C : 128mΩtyp.
1.6
1.2
0.8
VGS=4.5V, ID=1.5A
RDSON@Tj=25°C : 135mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD120C10H8
CYStek Product Specification