MTD120C10H8_16 Datasheet, PDF (2/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C986H8
Issued Date : 2016.10.14
Revised Date : 2016.11.07
Page No. : 2/14
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
N-channel P-channel
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
100
VGS
±20
-100
±20
V
TA=25 °C, VGS=10V (-10V)
2.7
IDSM
Continuous Drain Current ^{TA=70 °C, VGS=10V (-10V)}
2.2
TC=25 °C, VGS=10V (-10V)
7.8
ID
TC=100 °C, VGS=10V (-10V)
4.9
-3.0
-2.4
-8.8
A
-5.6
Pulsed Drain Current (Note 1 & 2)
IDM
25
-28
Power Dissipation
TA=25 °C
TA=70 °C
TC=25 °C
TC=100 °C
PDSM
PD
2.5 (Note 3)
1.6 (Note 3)
W
21
8.4
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
6
50 (Note 3)
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
100
VGS(th)
1.0
IGSS
-
-
IDSS
-
-
*RDS(ON)
-
-
-
V
VGS=0V, ID=250μA
-
2.5
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS=80V, VGS=0V
VDS=80V, VGS=0V, Tj=125°C
128
165
mΩ ^{ID=2A, VGS=10V}
135
175
ID=1.5A, VGS=4.5V
*GFS
-
5.5
-
S
VDS=10V, ID=2A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
-
244
-
-
34
-
pF VDS=30V, VGS=0V, f=1MHz
-
15
-
-
4.2
-
-
-
16.4
-
19.4
-
ns
VDS=50V, ID=1A, VGS=10V, RG=6Ω
-
16.6
-
MTD120C10H8
CYStek Product Specification