|
MTD011N10RH8 Datasheet, PDF (9/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
|
◁ |
CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 ï°C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3ï°C/second max.
3ï°C/second max.
Preheat
âTemperature Min(TS min)
100ï°C
150ï°C
âTemperature Max(TS max)
âTime(ts min to ts max)
150ï°C
60-120 seconds
200ï°C
60-180 seconds
Time maintained above:
âTemperature (TL)
183ï°C
217ï°C
â Time (tL)
60-150 seconds
60-150 seconds
Peak Temperature(TP)
240 +0/-5 ï°C
260 +0/-5 ï°C
Time within 5ï°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6ï°C/second max.
6ï°C/second max.
Time 25 ï°C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD011N10RH8
CYStek Product Specification
|
▷ |