MTD011N10RH8 Datasheet, PDF (5/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 5/10
Typical Characteristics
Typical Output Characteristics
100
10V,9V,8V,7V
80
6V
60
40
20
0
0
5V
4.5V
4V
VGS=3.5V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
1000
100
VGS=4.5V
10
VGS=10V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
ID=11.5A
80
60
40
20
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=10V, ID=11.5A
2
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 9.2mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTD011N10RH8
CYStek Product Specification