MTD011N10RH8 Datasheet, PDF (6/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 6/10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
100
10
0
100
10
1
Crss
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
VDS=10V
VDS=15V
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
0.4
ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
0.1
Ta=25°C
Pulsed
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
100 _RDSON
Limited
10
100μs
1ms
10ms
100ms
1 _{TC=25°C, Tj=150°C}
1s
VGS=10V, RθJC=2.5°C/W
DC
Single Pulse
0.1
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
2
VDS=50V
ID=11.5A
0
0
10
20
30
40
50
60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs CaseTemperature
50
45
40
35
30
25
20
15
10
VGS=10V, RθJC=2.5°C/W,
5
Single Pulse
0
25
50
75 100 125 150 175
TC, CaseTemperature(°C)
MTD011N10RH8
CYStek Product Specification