MTD011N10RH8 Datasheet, PDF (7/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 7/10
Typical Characteristics(Cont.)
Typical Transfer Characteristics
100
VDS=10V
80
60
2000
1600
1200
Single Pulse Maximum Power Dissipation
TJ(MAX)=150C
TC=25°C
RθJC=2.5°C/W
40
800
20
400
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0
0.001 0.01
Transient Thermal Response Curves
1
D=0.5
0.1
1
10
Pulse Width(s)
100 1000
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTD011N10RH8
CYStek Product Specification