MTD011N10RH8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTD011N10RH8 ^BVDSS
100V
ID@VGS=10V, TC=25°C
45A
ID@VGS=10V, TA=25°C
13.8A
Features
VGS=10V, ID=11.5A 9.2mΩ
RDSON(TYP) _{VGS=4.5V, ID=9.5A 12.8mΩ}
 Single Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Repetitive Avalanche Rated
 Pb-free lead plating and Halogen-free package
Symbol
MTD011N10RH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTD011N10RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTD011N10RH8
CYStek Product Specification