MTD011N10RH8 Datasheet, PDF (3/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169H8
Issued Date : 2015.11.23
Revised Date : 2016.04.27
Page No. : 3/10
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
100
VGS(th)
1.3
GFS *1
-
IGSS
-
-
IDSS
-
RDS(ON) *1
-
-
Dynamic
Ciss
-
Coss
-
Crss
-
Qg *1, 2
-
Qgs *1, 2
-
Qgd *1, 2
-
td(ON) *1, 2
-
tr *1, 2
-
td(OFF) *1, 2
-
tf *1, 2
-
Rg
-
-
-
30
-
-
-
9.2
12.8
2841
313
33
54
11
12
21
18.6
56
7
2.4
-
2.7
-
±100
1
25
12
17
-
-
-
-
-
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S
VDS =10V, ID=20A
nA V_GS=±20V
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125C
mΩ
VGS =10V, ID=11.5A
VGS =4.5V, ID=9.5A
pF
VGS=0V, VDS=25V, f=1MHz
nC VDS=50V, VGS=10V, ID=11.5A
ns VDS=50V, ID=11.5A, VGS=10V, RGS=3Ω
Ω f=1MHz
Source-Drain Diode
IS *1
-
ISM *3
-
VSD *1
-
trr
-
Qrr
-
-
45
-
180
0.82
1.2
39
-
69
-
A
V IS=15A, VGS=0V
ns
nC
IF=22A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTD011N10RH8
CYStek Product Specification