MTBA6C12H8 Datasheet, PDF (9/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 9/13
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
8
VDS=-10V
6
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40
TJ(MAX)=150°C
TA=25°C
RθJA=50°C/W
30
4
20
2
10
0
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
0
0.001
0.01
0.1
1
10
100
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
Maximum Drain Current vs Case Temperature
6
5
4
3
2
1 Tj(max)=150°C, VGS=-4.5V
RθJC=6°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTBA6C12H8
1.E+02
1.E+03
CYStek Product Specification