MTBA6C12H8 Datasheet, PDF (4/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 4/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
10
10V
9V
8 _8V
7V
6
6V
5V
4V
4 ^3.5V
1.4
1.2
1
3V
0.8
Brekdown Voltage vs Ambient Temperature
2
VGS=2.5V
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
1000
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
100
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
ID=2A
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=4.5V, ID=1.5A,
2
RDS(ON)@Tj=25°C :196mΩ
1.6
1.2
VGS=10V, ID=2A
0.8
RDS(ON)@Tj=25°C : 186mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBA6C12H8
CYStek Product Specification