MTBA6C12H8 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTBA6C12H8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH
120V
2.2A
6.3A
186mΩ
196mΩ
P-CH
-120V
-1.9A
-5.4A
255mΩ
285mΩ
Equivalent Circuit
MTBA6C12H8
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device
MTBA6C12H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA6C12H8
CYStek Product Specification