MTBA6C12H8 Datasheet, PDF (7/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 7/13
Typical Characteristics : Q2( P-channel)
8
-10V
-9V
6
-8V
-7V
-6V
-5V
4
-4V
Typical Output Characteristics
-3.5V
2
-3V
VGS=-2.5V
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=-4.5V
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
VGS=-10V
100
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
900
800
ID=-1.5A
700
600
500
400
300
200
100
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=-10V, ID=-1.5A
1.6
RDS(ON)@Tj=25°C : 255mΩ typ.
1.2
0.8
VGS=-4.5V, ID=-1A
RDS(ON)@Tj=25°C : 285mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBA6C12H8
CYStek Product Specification