MTBA6C12H8 Datasheet, PDF (3/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 3/13
7.8
-
0.9
-
nC VDS=96V, ID=2A, VGS=10V
2.2
-
-
-
2.2
10
A
0.79
1.3
V
VGS=0V, IS=2A
21
20
-
-
ns
nC
IF=2A dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
P-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
-120
-1.0
-
-
-
-
-
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
-1
-25
μA
VDS=-96V, VGS=0V
VDS=-96V, VGS=0V, Tj=125C
255
320
ID=-1.5A, VGS=-10V
285
375
m _{ID=-1A, VGS=-4.5V}
*GFS
-
4
-
S
VDS=-10V, ID=-1.5A
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
563
-
52
-
pF VDS=-25V, VGS=0V, f=1MHz
27
-
6.8
-
16.6
41
-
-
ns
VDS=-75V, ID=-1A, VGS=-10V, RG=6Ω
52.2
-
12.9
-
1.7
-
nC VDS=-96V, ID=-1.5A, VGS=-10V
3.0
-
-
-
-1.9
-8
A
-0.76
-1.3
V
VGS=0V, IS=-1.5A
20
18
-
-
ns
nC
IF=-1.5A dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTBA6C12H8
CYStek Product Specification