MTBA6C12H8 Datasheet, PDF (8/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 8/13
Typical Characteristics(Cont.) : Q2(P-channel)
Capacitance vs Drain-to-Source Voltage
1000
1.4
Threshold Voltage vs Junction Tempearture
1.2
Ciss
1
ID=-1mA
100
Coss
0.8
10
0
100
Crss
10
20
30
40
50
60
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
100
VDS=-10V
Pulsed
TA=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
0.6
ID=-250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-96V
8
VDS=-60V
6
4
2
ID=-1.5A
0
0
2
4
6
8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2.5
10
RDS(ON)
Limited
100μs
1
1ms
10ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=50°C/W, Single Pulse
0.01
100ms
1s
DC
0.1
1
10
100
-ID, Drain-Source Voltage(V)
1000
2
1.5
1
0.5 _{TA=25°C, Tj(max)=150°C,VGS=-10V}
RθJA=50°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTBA6C12H8
CYStek Product Specification