MTBA6C12H8 Datasheet, PDF (2/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 2/13
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
120
VGS
±20
-120
±20
V
TA=25 C, VGS=10V (-10V)
2.2
IDSM
Continuous Drain Current ^{TA=70 C, VGS=10V (-10V)}
1.8
TC=25 C, VGS=10V (-10V)
6.3
ID
TC=100 C, VGS=10V (-10V)
4.0
-1.9
-1.5
-5.4
A
-3.4
Pulsed Drain Current (Note 1 & 2)
IDM
10
-8
Power Dissipation
TA=25 C
TA=70 C
TC=25 C
TC=100 C
PDSM
PD
2.5 (Note 3)
1.6 (Note 3)
W
21
8.4
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
6
50 (Note 3)
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in²copper pad of FR-4 board; 125C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
120
VGS(th)
1.0
IGSS
-
-
IDSS
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS=96V, VGS=0V
VDS=96V, VGS=0V, Tj=125C
-
*RDS(ON)
-
186
235
ID=2A, VGS=10V
196
255
m _{ID=1.5A, VGS=4.5V}
*GFS
-
6.3
-
S
VDS=10V, ID=2A
Dynamic
Ciss
-
263
-
Coss
-
39
-
pF VDS=25V, VGS=0V, f=1MHz
Crss
-
21
-
*td(ON)
-
4.8
-
*tr
*td(OFF)
-
-
16
20.6
-
-
ns
VDS=75V, ID=1A, VGS=10V, RG=6Ω
*tf
-
17.6
-
MTBA6C12H8
CYStek Product Specification