MTB012C04Q8 Datasheet, PDF (8/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C049Q8
Issued Date : 2017.04.24
Revised Date :
Page No. : 8/12
Typical Characteristics(Cont.) : Q2(P-channel)
Capacitance vs Drain-to-Source Voltage
10000
1.4
Ciss
1.2
Threshold Voltage vs Junction Tempearture
1000
100
10
0
C _oss
Crss
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
1
ID=-1mA
0.8
0.6
ID=-250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
100
VDS=-10V
Pulsed
TA=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
10
100μs
1
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=62°C/W, Single Pulse
0.01
0.01
0.1
1
10
-ID, Drain-Source Voltage(V)
1ms
10ms
100ms
1s
DC
100
8
6
4
2
VDS=-15V
ID=-7.6A
0
0 5 10 15 20 25 30 35 40 45
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
TA=25°C, Tj=150°C, VGS=-10V
1
RθJA=62°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB012C04Q8
CYStek Product Specification