MTB012C04Q8 Datasheet, PDF (6/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C049Q8
Issued Date : 2017.04.24
Revised Date :
Page No. : 6/12
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
50
50
VDS=10V
40
40
30
30
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
TJ(MAX)=150°C
TA=25°C
RθJA=62C/W
20
20
10
10
0
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
0
0.001
0.01
1
D=0.5
Transient Thermal Response Curves
0.1
1
Pulse Width(s)
10
100
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB012C04Q8
CYStek Product Specification