MTB012C04Q8 Datasheet, PDF (7/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C049Q8
Issued Date : 2017.04.24
Revised Date :
Page No. : 7/12
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
50
1.4
-10V, -6V, -5.5V,-5V,-4.5V,-4V
40
1.2
-3.5V
30
1
Brekdown Voltage vs Ambient Temperature
20
-3V
10
VGS=-2.5V
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=-4.5V
-10V
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
45
40
ID=-7A
35
30
25
20
15
ID=-5A
10
5
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=-10V, ID=-7A
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 15.4mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB012C04Q8
CYStek Product Specification