MTB012C04Q8 Datasheet, PDF (3/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
CYStech Electronics Corp.
Spec. No. : C049Q8
Issued Date : 2017.04.24
Revised Date :
Page No. : 3/12
6.4
-
2.4
-
nC VDS=15V, ID=8.3A, VGS=4.5V
2.2
-
-
-
2.3
A
9.2
0.73
1
V
VGS=0V, IS=1A
10.6
4.5
-
-
ns
nC
IF=1A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
-40
VGS(th)
-1.0
-
-
V
VGS=0V, ID=-250μA
-
-2.5
VDS=VGS, ID=-250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
-1
-25
μA
VDS=-32V, VGS=0V
VDS=-32V, VGS=0V, Tj=125°C
*RDS(ON)
-
15.4
20
mΩ ^{VGS=-10V, ID=-7A}
-
18.7
27
VGS=-4.5V, ID=-5A
*GFS
-
14.5
-
S
VDS=-10V, ID=-7A
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
2334
-
206
-
124
-
12
-
20.2
-
173.2
-
62
-
20.5
-
6.4
-
6.3
-
-
-2.1
-
-8.4
-0.72
-1
14.2
-
6.6
-
pF VDS=-15V, VGS=0V, f=1MHz
ns
VDS=-15V, ID=-1A, VGS=-10V, RG=15Ω
nC VDS=-15V, ID=-7.6A, VGS=-4.5V
A
V
VGS=0V, IS=-1A
ns
nC
IF=-1A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB012C04Q8
CYStek Product Specification