MTB012C04Q8 Datasheet, PDF (5/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C049Q8
Issued Date : 2017.04.24
Revised Date :
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1.2
C _oss
1
ID=1mA
100
0.8
Crss
0.6
ID=250μA
10
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=62°C/W,Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
1s
DC
100
8
6
4
2
VDS=15V
ID=8.3A
0
0
2
4
6
8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
TA=25°C, Tj=150°C,VGS=10V
1
RθJA=62°C/W
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
MTB012C04Q8
CYStek Product Specification