MTB012C04Q8 Datasheet, PDF (4/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C049Q8
Issued Date : 2017.04.24
Revised Date :
Page No. : 4/12
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
50
1.4
10V,6V,5.5V,5V,4.5V
40
1.2
4V
30
1
Brekdown Voltage vs Ambient Temperature
20
10
0
0
3.5V
VGS=3V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
1
0.8
VGS=4.5V
10V
0.6
0.4
Tj=25°C
Tj=150°C
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
45
40
35
ID=8A
30
25
20
15
ID=6A
10
5
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=10V, ID=8A
2
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 11.8mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB012C04Q8
CYStek Product Specification