MTB012C04Q8 Datasheet, PDF (2/12 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C049Q8
Issued Date : 2017.04.24
Revised Date :
Page No. : 2/12
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
N-channel P-channel
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
40
VGS
±20
-40
±20
V
Continuous Drain Current ^{TA=25 °C, VGS=10V (-10V)}
8.4
-8.1
(Note 2) _{TA=70 °C, VGS=10V (-10V)}
6.7
-6.5
ID
Continuous Drain Current ^{TC=25 °C, VGS=10V (-10V)}
13.2
-12.8
A
TC=100 °C, VGS=10V (-10V)
8.3
-8.1
Pulsed Drain Current (Note 1)
Power Dissipation @TC=25°C
IDM
74
-72
5
Power Dissipation @ TA=25°C
PD
2 (Note 2)
W
1.14 (Note 3)
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3. Surface mounted on 1 in² copper pad of FR-4 board, steady state.
Value
25
62 (Note 2)
110 (Note 3)
Unit
°C/W
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
40
VGS(th)
1.0
-
-
V
VGS=0V, ID=250μA
-
2.5
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
25
μA
VDS=32V, VGS=0V
VDS=32V, VGS=0V, Tj=125°C
*RDS(ON)
-
11.8
15
mΩ ^{VGS=10V, ID=8A}
-
15.7
22
VGS=4.5V, ID=6A
*GFS
-
12
-
S
VDS=10V, ID=8A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
-
672
-
-
119
-
pF VDS=15V, VGS=0V, f=1MHz
-
53
-
-
7.8
-
-
-
17.4
-
48
-
ns
VDS=15V, ID=1A, VGS=10V, RG=25Ω
-
35.4
-
MTB012C04Q8
CYStek Product Specification