PSOC4000 Datasheet, PDF (14/34 Pages) Cypress Semiconductor – Programmable System-on-Chip

PSoC^® 4: PSoC 4000 Family
Datasheet
Electrical Specifications
Absolute Maximum Ratings
Table 3. Absolute Maximum Ratings^[4]
Spec ID#
SID1
SID2
SID3
SID4
SID5
BID44
BID45
BID46
Parameter
V_{DD_ABS}
V_{CCD_ABS}
V_{GPIO_ABS}
I_{GPIO_ABS}
I_{GPIO_injection}
ESD_HBM
ESD_CDM
LU
Description
Digital supply relative to V_SS
Direct digital core voltage input relative
to V_SS
GPIO voltage
Maximum current per GPIO
GPIO injection current, Max for V_IH >
V_DD, and Min for V_IL < V_SS
Electrostatic discharge human body
model
Electrostatic discharge charged device
model
Pin current for latch-up
Min
–0.5
–0.5
–0.5
–25
–0.5
2200
500
–140
Typ
Max Units
Details/
Conditions
–
6
V
–
1.95
V
–
V_DD+0.5
V
–
25
mA
–
0.5
mA Current injected
per pin
–
–
V
–
–
V
–
140
mA
Device Level Specifications
All specifications are valid for –40 °C  T_A  85 °C and T_J  100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
except where noted.
Table 4. DC Specifications
Typical values measured at V_DD = 3.3 V and 25 °C.
Spec ID#
SID53
Parameter
V_DD
Description
Power supply input voltage
SID255
SID54
SID55
V_DD
V_DDIO
C_EFC
Power supply input voltage (V_CCD =
V_DD)
V_DDIO domain supply
External regulator voltage bypass
SID56
C_EXC
Power supply bypass capacitor
Active Mode, V_DD = 1.8 to 5.5 V
SID9
I_DD5
Execute from flash; CPU at 6 MHz
SID12
I_DD8
Execute from flash; CPU at 12 MHz
SID16
I_DD11
Execute from flash; CPU at 16 MHz
Sleep Mode, V_DD = 1.71 to 5.5 V
SID25
I_DD20
I²C wakeup, WDT on. 6 MHz
SID25A
I_DD20A
I²C wakeup, WDT on. 12 MHz
Deep Sleep Mode, V_DD = 1.8 to 3.6 V (Regulator on)
SID31
I_DD26
I²C wakeup and WDT on
Min Typ
1.8
–
1.71
–
1.71
–
–
0.1
–
1
Details/
Max Units Conditions
5.5
V With regulator
enabled
1.89
V Internally unreg-
ulated supply
V_DD
V
–
µF X5R ceramic or
better
–
µF X5R ceramic or
better
–
2.0
2.85
mA
–
3.2
3.75
mA
–
4.0
4.5
mA
–
1.1
–
mA
–
1.4
–
mA
–
2.5
8.2
µA
Note
4. Usage above the absolute maximum conditions listed in Table 1 may cause permanent damage to the device. Exposure to Absolute Maximum conditions for extended
periods of time may affect device reliability. The Maximum Storage Temperature is 150 °C in compliance with JEDEC Standard JESD22-A103, High Temperature
Storage Life. When used below Absolute Maximum conditions but above normal operating conditions, the device may not operate to specification.
Document Number: 001-89638 Rev. *E
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