HCPL-316J-500E Datasheet, PDF (30/33 Pages) AVAGO TECHNOLOGIES LIMITED – 2.5 Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback

As an example, the total input and output power dis-
sipation can be calculated given the following condi-
tions:
• I_{ON, MAX} ~ 2.0 A
• V_CC2 = 18 V
• V_EE = -5 V
• f_CARRIER = 15 kHz
Step 1: Calculate R_G minimum from I_OL peak specification:
To find the peak charging l_OL assume that the gate is
initially charged the steady-state value of V_EE. Therefore
apply the following relationship:
R_G =^[—^VO—^H@—⁶⁵—⁰ —^μA—^– —^(VO—^L+—^VE—^E)]
I_OL,PEAK
=^[—^VC—^C2 —^{– 1}—^– —^(VO—^L —^{+ V}—^EE—^)]
I_OL,PEAK
=¹â€”^{8 V}—^–—¹ —^{V –}—⁽¹â€”^.5—^{V +}—^(-—^{5 V}—⁾⁾
2.0 A
= 10.25 :
≈ 10.5 : (for a 1% resistor)
(Note from Figure 76 that the real value of I_OL may vary from the value
calculated from the simple model shown.)
Step 2: Calculate total power dissipation in the HCPL-316J:
The HCPL-316J total power dissipation (P_T) is equal to
the sum of the input-side power (P_I) and output-side
power (P_O):
P_T = P_I + P_O
P_I = I_CC1 * V_CC1
P_O = P_O(BIAS) + P_O,SWTICH
= I_CC2 * (V_CC2–V_EE ) + E_SWITCH * f_SWITCH
where,
MAX. I_ON, I_OFF vs. GATE RESISTANCE
(V_CC2 / V_EE2 = 25 V / 5 V
4
3
2
1
I_OFF (MAX.)
0
-1
I_ON (MAX.)
-2
-3
0 20 40 60 80 100 120 140 160 180 200
Rg (Ω)
Figure 76. Typical peak I_ON and I_OFF currents vs. Rg (for
HCPL-316J output driving an IGBT rated at 600 V/100 A.
P_O(BIAS) = steady-state power dissipation in the HC-
PL-316J due to biasing the device.
P_O(SWITCH) = transient power dissipation in the HC-
PL-316J due to charging and discharging power device
gate.
E_SWITCH = Average Energy dissipated in HCPL-316J due
to switching of the power device over one switching
cycle (μJ/cycle).
f_SWITCH = average carrier signal frequency.
For R_G = 10.5, the value read from Figure 77 is E_SWITCH
= 6.05 μJ. Assume a worst-case average I_CC1 = 16.5 mA
(which is given by the average of I_CC1H and I_CC1L ). Simi-
larly the average I_CC2 = 5.5 mA.
P_I = 16.5 mA * 5.5 V = 90.8 mW
P_O = P_O(BIAS) + P_O,SWITCH
= 5.5 mA * (18 V – (–5 V)) + 6.051 μJ * 15 kHz
= 126.5 mW + 90.8 mW
= 217.3 mW
Step 3: Compare the calculated power dissipation with the abso-
lute maximum values for the HCPL-316J:
For the example,
P_I = 90.8 mW < 150 mW (abs. max.)  OK
P_O = 217.3 mW < 600 mW (abs. max.)  OK
Therefore, the power dissipation absolute maximum
rating has not been exceeded for the example.
Please refer to the following Thermal Model section for
an explanation on how to calculate the maximum junc-
tion temperature of the HCPL-316J for a given PC board
layout configuration.
SWITCHING ENERGY vs. GATE RESISTANCE
(V_CC2 / V_EE2 = 25 V / 5 V
9
8
7
6
5
Ess (Qg = 650 nC)
4
3
2
1
0
0
50
100
150
200
Rg (Ω)
Figure 77. Switching energy plot for calculating average Pswitch
(for HCPL-316J output driving an IGBT rated at 600 V/100 A).
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