AMC0XXCFLKA Datasheet, PDF (33/42 Pages) Advanced Micro Devices – 1, 2, 4, or 10 Megabyte 5.0 V-only Flash Memory PC Card

AC CHARACTERISTICS
Write/Erase/Program Operations
Card Speed
Parameter Symbol
-150 ns
JEDEC Standard
Parameter Description
Min
Typ
Max
Unit
t_AVAV
t_WC
Write Cycle Time
150
ns
t_AVWL
t_AS
Address Setup Time
20
ns
t_WLAX
t_AH
Address Hold Time
55
ns
t_DVWH
t_DS
Data Setup Time
50
ns
t_WHDX
t_DH
Data Hold Time
20
ns
t_OEH
Output Enable Hold Time for Embedded Algorithm
20
ns
t_WHGL
t_WR
Write Recovery Time before Read
6
µs
t_GHWL
Read Recovery Time before Write
0
µs
t_WLOZ
Output in High-Z from Write Enable
5
ns
t_WHOZ
Output in Low-Z from Write Enable
60
ns
t_ELWL
t_CS
CE Setup Time
0
ns
t_WHEH
t_CH
CE Hold Time
20
ns
t_WLWH
t_WP
Write Pulse Width
45
ns
t_WHWL
t_WPH Write Pulse Width HIGH
50
ns
t_WHWH3
Embedded Programming Operation (Notes 1, 2, 3)
16
µs
48
ms
t_WHWH4
Embedded Erase Operation for each 64K Byte
Memory Sector (Notes 1, 2)
1.5
s
t_VCS
V_CC Setup Time to CE LOW
50
µs
Notes:
1. Rise/Fall ð 10 ns.
2. Maximum specification not needed due to the devices internal stop timer that will stop any erase or write operation that exceed
the device specification.
3. Embedded Program Operation of 16 µs consist of 10 µs program pulse and 6 µs write recovery before read. This is the
minimum time for one pass through the programming algorithm. D5 = “1” only after a byte takes longer than 48 ms to Write.
5/4/98
AmC0XXCFLKA
33