AMC0XXCFLKA Datasheet, PDF (10/42 Pages) Advanced Micro Devices – 1, 2, 4, or 10 Megabyte 5.0 V-only Flash Memory PC Card

Table 4. Odd Byte Command Definitions (Note 5)
Embedded
Command
Sequence
Bus
Write
Cycles
Req’d
First Bus Second Bus
Write Cycle Write Cycle
Addr* Data Addr* Data
Third Bus
Write Cycle
Addr* Data
Fourth Bus
Read/Write Cycle
Addr* Data
Fifth Bus
Write Cycle
Addr* Data
Sixth Bus
Write Cycle
Addr* Data
Reset/Read
4 AAABH AAH 5555H 55H AAABH F0H RA
RD
Autoselect
4 AAABH AAH 5555H 55H AAABH 90H 00H/02H 01H/A4H
Byte Write
4 AAABH AAH 5555H 55H AAABH A0H PA
PD
Segment Erase 6 AAABH AAH 5555H 55H AAABH 80H AAABH AAH 5555H 55H AAABH 10H
Sector Erase
6 AAABH AAH 5555H 55H AAABH 80H AAABH AAH 5555H 55H SA 30H
Sector Erase Suspend Erase can be suspended during sector erase with Addr (don’t care), Data (B0H)
Sector Erase Resume Erase can be resumed after suspend with Addr (don’t care), Data (30H)
*Address for Memory Segment 1 (S1) only. Address for the higher odd memory segments (S3–S19) = (Addr) + ((N–1)/2)*
100000H + 80000H where N = Memory Segment number (1) for 1 Mbyte, N = (1, 3) for 2 Mbyte, N = (1, 3, 5, 7) for 4 Mbyte,
N = (1…19) for 10 Mbyte.
Notes:
1. Address bit A16 = X = Don’t Care for all address commands except for Program Address (PA), Read Address (RA) and Sector
Address (SA).
2. Bus operations are defined in Table 1.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA = Address of the sector to be erased. The combination of A17, A18, A19 will uniquely select any sector of a segment.
To select the memory segment:1 and 2 Mbyte: Use CE2 and A20
4 Mbyte:
Use CE2 and A20, A21
10 Mbyte:
Use CE2 and A20–A23.
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE pulse.
5. A0 = 1 and CE1 = 0 or A0 = X and CE2 = 0.
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AmC0XXCFLKA
5/4/98